In the Middle-Lower Yangtze River metallogenic belt, the possibility of the development of copper-gold mineralization similar to things of the fault-uplift area in the depth of volcanic basin has attracted extensive attention. Based on the geophysical profile through the Tongling fault-uplift area and Fanchang volcanic basin and using integrated geophysical exploration methods, the authors identified the deep geological structure, rock and ore-controlling structure and the distribution of intrusions. The comparative study shows that the lithology, height and distribution of intrusions are different in Tongling and Fanchang area, and the intrusions in Fanchang is more felsic and shallow than those in Tongling. The faults in Tongling area only control the shallow location of intrusions, while the boundary faults in Fanchang basin are the channels for magma rising. The intrusion in Tongling area is characterized by "one mother and multiple offspring" and different intrusive branches or strains derived from the same magma chamber, which directly proves that different types of intrusive rocks in Tongling area are the products of the evolution of the same magma source region, and different degrees of evolution may be one of the reasons for their different kinds of mineralization. In this study, the authors used integrated geophysical exploration methods to discuss the difference of diagenesis and mineralization between Tongling fault-uplift area and Fanchang volcanic basin and explain the reason why only small iron mineralization exists in Fanchang region while large copper (-gold) deposit occurs in Tongling region. In addition, large-scale intrusion of granitic magma in the depth of Fanchang region indicates that there is no "second Tongling" in the depth of the Fanchang volcanic basin. These results further deepen the understanding of the regularity of copper and iron mineralization in the Middle and Lower Yangtze River metallogenic belt and provide theoretical support for ore prospecting and exploration in the future.
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