高密度电阻率法比值参数基于阻尼最小二乘反演

刘成功, 金胜, 魏文博, 景建恩, 叶高峰, 尹曜田

The least squares inversion of high-density resistivity method ratio parameter based on smooth constraint

Cheng-Gong LIU, Sheng JIN, Wen-Bo WEI, Jian-En JING, Gao-Feng YE, Yao-Tian YIN

图5 实测剖面参数断面 a—α装置电阻率断面;b—β装置电阻率断面;c—γ装置电阻率断面图;d—比值参数(T)拟断面; e—比值参数(T)反演断面

Fig.5 Sectional view of measured section parameters a—sectional view of resistivity of the alpha device; b—sectional view of the resistivity of the beta device;c—sectional view of the resistivity of the gamma device; d—ratio parameter (T) pseudo sectional view; e—ratio parameter (T) sectional view